Recombination activity of light-activated copper defects in p-type silicon studied by injection- and temperature-dependent lifetime spectroscopy

摘要

The presence of copper contamination is known to cause strong light-induced degradation (Cu-LID) in silicon. In this paper, we parametrize the recombination activity of light-activated copper defects in terms of Shockley—Read—Hall recombination statistics through injection- and temperature dependent lifetime spectroscopy (TDLS) performed on deliberately contaminated float zone silicon wafers. We obtain an accurate fit of the experimental data via two non-interacting energy levels, i.e., a deep recombination center featuring an energy level at Ec−Et=0.48−0.62 eVEc−Et=0.48−0.62 eV with a moderate donor-like capture asymmetry (k=1.7−2.6) k=1.7−2.6)  and an additional shallow energy state located at Ec−Et=0.1−0.2 eVEc−Et=0.1−0.2 eV, which mostly affects the carrier lifetime only at high-injection conditions. Besides confirming these defect parameters, TDLS measurements also indicate a power-law temperature dependence of the capture cross sections associated with the deep energy state. Eventually, we compare theseresults with the available literature data, and we find that the formation of copper precipitates is the probable root cause behind Cu-LID.